Low-Temperature Deposition of SiC Films by Microwave-Plasma Chemical Vapor Deposition
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چکیده
منابع مشابه
Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization
Nanocrystalline silicon carbide ~SiC! thin films were deposited by plasma enhanced chemical vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 °C and different gas flow ratios ~GFRs!. While diethylsilane was used as the source for the preparation of SiC films, hydrogen, argon and helium were used as dilution gases in different concentrations. The effects...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 1994
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.102.13